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| PD- 95304 IRF7421D1PBF FETKYa MOSFET / Schottky Diode l l l l l Co-packaged HEXFET(R) Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint Lead-Free A S S G 1 2 3 4 8 7 A A D D D D VDSS = 30V RDS(on) = 0.035 Schottky Vf = 0.39V 6 5 Description Top View The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. SO-8 Absolute Maximum Ratings (TA = 25C unless otherwise noted) Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS@10VA Pulsed Drain Current A Power Dissipation A Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt A Junction and Storage Temperature Range Maximum 5.8 4.6 46 2.0 1.3 16 20 -5.0 -55 to +150 Units A W W/C V V/ns C Thermal Resistance Ratings Parameter RJA Junction-to-Ambient A Maximum 62.5 Units C/W Notes: A Repetitive rating; pulse width limited by maximum junction temperature (see figure 11) A ISD 4.1A, di/dt 110A/s, VDD V(BR)DSS, TJ 150C A Pulse width 300s; duty cycle 2% A Surface mounted on FR-4 board, t 10sec. www.irf.com 1 10/13/04 IRF7421D1PBF MOSFET Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 30 -- -- 1.0 4.6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- 0.026 0.040 -- -- -- -- -- -- 18 2.2 5.9 6.7 27 20 16 510 200 84 Max. Units Conditions -- V VGS = 0V, ID = 250A 0.035 VGS = 10V, ID = 4.1A 0.060 VGS = 4.5V, ID = 2.1A -- V VDS = VGS, ID = 250A -- S VDS = 15V, ID = 2.1A 1.0 VDS = 24V, VGS = 0V A 25 VDS = 24V, V GS = 0V, TJ = 125C -100 VGS = -20V nA 100 VGS = 20V 27 ID = 4.1A 3.3 nC VDS = 24V 8.9 VGS = 10V (see figure 10) A -- VDD = 15V -- ID = 4.1A ns -- RG = 6.2 -- RD = 3.7 A -- VGS = 0V -- pF VDS = 25V -- = 1.0MHz (see figure 9) Conditions 2 MOSFET Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) -- -- 3.1 A I SM Pulsed Source Current (Body Diode) -- -- 33 VSD Body Diode Forward Voltage -- -- 1.0 V trr Reverse Recovery Time (Body Diode) -- 57 86 ns Q rr Reverse Recovery Charge -- 93 140 nC TJ = 25C, IS = 4.1A, V GS = 0V TJ = 25C, IF = 4.1A di/dt = 100A/s A Schottky Diode Maximum Ratings IF(av) I SM Parameter Max. Average Forward Current Max. peak one cycle Non-repetitive Surge current Max. Units. 1.7 A 1.2 120 11 A Conditions 50% Duty Cycle. Rectangular Wave, TA = 25C TA = 70C 5s sine or 3s Rect. pulse Following any rated 10ms sine or 6ms Rect. pulse load condition & with VRRM applied Schottky Diode Electrical Specifications V FM Parameter Max. Forward voltage drop Max. Units 0.50 0.62 V 0.39 0.57 0.06 mA 16 110 pF 3600 V/ s Conditions IF = 1.0A, TJ = 25C IF = 2.0A, TJ = 25C IF = 1.0A, TJ = 125C IF = 2.0A, TJ = 125C . VR = 30V TJ = 25C TJ = 125C VR = 5Vdc ( 100kHz to 1 MHz) 25C Rated VR IRM Ct dv/dt Max. Reverse Leakage current Max. Junction Capacitance Max. Voltage Rate of Charge 2 www.irf.com 2 Power Mosfet Characteristics 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP IRF7421D1PBF 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP I D , Drain-to-Source Current (A) 10 I D, Drain-to-Source Current (A) 10 3.0V 20s PULSE WIDTH TJ = 150C A 0.1 1 10 3.0V 1 0.1 1 20s PULSE WIDTH TJ = 25C A 10 1 V DS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 I D , Drain-to-Source Current (A) TJ = 25C 10 TJ = 150C ISD , Reverse Drain Current (A) 10 TJ = 150C TJ = 25C 1 3.0 3.5 4.0 4.5 V DS = 10V 20s PULSE WIDTH 5.0 5.5 6.0 A 1 0.4 0.8 1.2 1.6 VGS = 0V 2.0 A 2.4 VGS , Gate-to-Source Voltage (V) VSD , Source-to-Drain Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage www.irf.com 3 IRF7421D1PBF Power Mosfet Characteristics R DS(on) , Drain-to-Source On Resistance (Normalized) I D = 4.1A 1.5 RDS (on) , Drain-to-Source On Resistance () 2.0 0.2 VGS = 4.5V 0.1 1.0 0.5 0.0 -60 -40 -20 0 20 40 60 80 VGS = 10V VGS =10V 0.0 0 5 10 I 100 120 140 160 A 15 20 25 30 35 A TJ , Junction Temperature (C) , , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current 0.07 100 RDS (on) , Drain-to-Source On Resistance () 0.06 OPERATION IN THIS AREA LIMITED BY R DS(on) 0.05 I D , Drain Current (A) 10 100s 0.04 I = 5.8A 1ms 0.03 1 10ms 0.02 0.01 3 6 9 12 15 A 0.1 TA = 25C TJ = 150C Single Pulse 0.1 1 10 100 A V /5 , Gate-to-Source Voltage (V) Fig 7. Typical On-Resistance Vs. Gate Voltage VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7421D1PBF Power Mosfet Characteristics 1000 800 C, Capacitance (pF) Ciss 600 Coss V GS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 20 I D = 4.1A V DS = 24V V DS = 15V 16 12 400 8 Crss 200 4 0 1 10 100 A 0 0 5 10 15 FOR TEST CIRCUIT SEE FIGURE 9 20 25 30 A VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 0.1 0.0001 t1, Rectangular Pulse Duration (sec) Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7421D1PBF Schottky Diode Characteristics 10 100 Reverse Current - IR (mA) 10 1 0.1 0.01 0.001 0.0001 TJ = 150C 125C 100C 75C 50C 25C Instantaneous Forward Current - IF (A) ) 0 5 10 15 20 25 30 1 TJ = 150C TJ = 125C TJ = 25C Reverse Voltage - V R (V) Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage 1000 Junction Capacitance - C T (pF) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 100 Forward Voltage Drop - VFM (V) TJ = 25C Fig. 12 -Typical Forward Voltage Drop Characteristics 10 0 10 20 A 30 Reverse Voltage - V R (V) Fig.14 - Typical Junction Capacitance Vs. Reverse Voltage 6 www.irf.com IRF7421D1PBF SO-8 (Fetky) Package Outline D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H 1 2 3 4 .050 BAS IC .025 BAS IC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BAS IC 0.635 BASIC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e K L y e1 A K x 45 C 0.10 [.004] y 8X c 8X b 0.25 [.010] A1 CAB 8X L 7 NOTES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONTROLLING DIMENS ION: MILLIME TER 3. DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES ]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOE S NOT INCLUDE MOLD PROT RUS IONS . MOLD PROTRUS IONS NOT TO EXCE ED 0.15 [.006]. 6 DIMENS ION DOE S NOT INCLUDE MOLD PROT RUS IONS . MOLD PROTRUS IONS NOT TO EXCE ED 0.25 [.010]. 7 DIMENS ION IS THE LE NGTH OF LEAD FOR S OLDERING TO A S UBS TRATE. 3X 1.27 [.050] 6.46 [.255] FOOTPRINT 8X 0.72 [.028] 8X 1.78 [.070] SO-8 (Fetky) Part Marking Information EXAMPLE: T HIS IS AN IRF7807D1 (FET KY) DAT E CODE (YWW) P = DIS GNATES LEAD - FREE PRODUCT (OPTIONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER INTERNAT IONAL RECT IFIER LOGO XXXX 807D1 www.irf.com 7 IRF7421D1PBF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04 8 www.irf.com |
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